npn silicon power darlington transistors the mje5740 and MJE5742 darlington transistors are designed for highvoltage power switching in inductive circuits. they are particularly suited for operation in applications such as: ? small engine ignition ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ???????????????????????? ???????????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ???? ???? mje5740 ???? ???? MJE5742 ???? ???? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo(sus) ???? ???? 300 ???? ???? 400 ???? ???? vdc ???????????? ???????????? collectoremitter voltage ???? ???? v cev ???? ???? 600 ???? ???? 800 ???? ???? vdc ???????????? ???????????? emitter base voltage ???? ???? v eb ??????? ??????? 8 ???? ???? vdc ???????????? ? ?????????? ? ???????????? collector current continuous peak (1) ???? ? ?? ? ???? i c i cm ??????? ? ????? ? ??????? 8 16 ???? ? ?? ? ???? adc ???????????? ???????????? base current continuous peak (1) ???? ???? i b i bm ??????? ??????? 2.5 5 ???? ???? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 2 16 ???? ? ?? ? ???? watts mw/ c ???????????? ? ?????????? ? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ? ?? ? ???? p d ??????? ? ????? ? ? ????? ? ??????? 80 640 ???? ? ?? ? ? ?? ? ???? watts mw/ c ???????????? ???????????? operating and storage junction temperature range ???? ???? t j , t stg ??????? ??????? 65 to + 150 ???? ???? c (1) pulse test: pulse width = 5 ms, duty cycle = 10%. ???????????????????????? ???????????????????????? thermal characteristics ????????????? ????????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.56 ??? ??? c/w ????????????? ????????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 62.5 ??? ??? c/w ????????????? ????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ????? ????? t l ?????? ?????? 275 ??? ??? c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 5 1 publication order number: mje5740/d mje5740 MJE5742 power darlington transistors 8 amperes 300, 400 volts 80 watts *on semiconductor preferred device 100 50 * case 221a06 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
mje5740 MJE5742 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (2) ??????????????????? ??????????????????? collectoremitter sustaining voltage mje5740 (i c = 50 ma, i b = 0) MJE5742 ????? ????? v ceo(sus) ???? ???? 300 400 ??? ??? ???? ???? ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v cev = rated value, v be(off) = 1.5 vdc) (v cev = rated value, v be(off) = 1.5 vdc, t c = 100 c) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? ??? ? ? ? ??? ???? ? ?? ? ???? 1 5 ??? ? ? ? ??? madc ??????????????????? ??????????????????? emitter cutoff current (v eb = 8 vdc, i c = 0) ????? ????? i ebo ???? ???? ??? ??? ???? ???? 75 ??? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????? ??????????????????? second breakdown collector current with base forward biased ????? ????? i s/b ??????????? ??????????? see figure 6 ??????????????????? clamped inductive soa with base reverse biased ????? rbsoa ??????????? see figure 7 ??????????????????? characteristic ????? symbol ???? min ??? typ ???? max ??? unit ????????????????????????????????? ????????????????????????????????? on characteristics (3) ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 0.5 adc, v ce = 5 vdc) (i c = 4 adc, v ce = 5 vdc) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 50 200 ??? ? ? ? ??? 100 400 ???? ? ?? ? ???? ??? ? ? ? ??? ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 4 adc, i b = 0.2 adc) collectoremitter saturation voltage (i c = 8 adc, i b = 0.4 adc) collectoremitter saturation voltage (i c = 4 adc, i b = 0.2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 2 3 2.2 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 4 adc, i b = 0.2 adc) baseemitter saturation voltage (i c = 8 adc, i b = 0.4 adc) baseemitter saturation voltage (i c = 4 adc, i b = 0.2 adc, t c = 100 c) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? ??? ? ? ? ??? ???? ? ?? ? ???? 2.5 3.5 2.4 ??? ? ? ? ??? vdc ??????????????????? ??????????????????? diode forward voltage (4) (i f = 5 adc) ????? ????? v f ???? ???? ??? ??? ???? ???? 2.5 ??? ??? vdc ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? typical resistive load (table 1) ???????? ???????? delay time ???????????? ???????????? ????? ????? t d ???? ???? ??? ??? 0.04 ???? ???? ??? ??? m s ???????? ???????? rise time ???????????? ???????????? (v cc = 250 vdc, i c(pk) = 6 a i b1 =i b2 =025a t =25 m s ????? ????? t r ???? ???? ??? ??? 0.5 ???? ???? ??? ??? m s ???????? ???????? storage time ???????????? ???????????? () i b1 = i b2 = 0.25 a, t p = 25 m s, d u t y cyc l e 1 %) ????? ????? t s ???? ???? ??? ??? 8 ???? ???? ??? ??? m s ???????? ???????? fall time ???????????? ???????????? duty cycle 1%) ????? ????? t f ???? ???? ??? ??? 2 ???? ???? ??? ??? m s ????????????????????????????????? inductive load, clamped (table 1) ???????? ???????? voltage storage time ???????????? ???????????? ( i c( p k) = 6 a , v ce( p k) = 250 vdc ????? ????? t sv ???? ???? ??? ??? 4 ???? ???? ??? ??? m s ???????? ???????? crossover time ???????????? ???????????? (i c( p k) = 6 a , v ce( p k) = 250 vdc i b1 = 0.06 a, v be(off) = 5 vdc) ????? ????? t c ???? ???? ??? ??? 2 ???? ???? ??? ??? m s (2) pulse test: pulse width = 300 m s, duty cycle = 2%. (continued) (3) pulse test: pulse width 300 m s, duty cycle = 2%. (4) the internal collectortoemitter diode can eliminate the need for an external diode to clamp inductive loads. tests have sh own that the forward recovery voltage (v f ) of this diode is comparable to that of typical fast recovery rectifiers.
mje5740 MJE5742 http://onsemi.com 3 v be , base-emitter voltage (volts) t rv i c v ce 90% i b1 t sv i c(pk) v ce(pk) 90% v ce(pk) 90% i c 10% v ce(pk) 10% i c(pk) 2% i c i b t fi t ti t c 0.1 i c , collector current (amps) 5 2000 h fe , dc current gain v ce = 5 v 1 +25 c 210 1000 100 10 0 t c , case temperature ( c) 0 40 120 160 60 power derating factor (%) second breakdown derating 100 80 40 20 60 100 140 80 thermal derating figure 1. power derating figure 2. inductive switching measurements i c , collector current (amps) 2.4 1.6 0.4 figure 3. dc current gain figure 4. baseemitter voltage 2 1.2 0.8 h fe = 20 0.2 10 2 0.5 1 5 time 150 c -55 c 20 2.2 1.4 1.8 1 0.6 +150 c +25 c -55 c typical characteristics
mje5740 MJE5742 http://onsemi.com 4 reverse bias safe operating area and inductive switching resistive switching output waveforms test circuits circuit values test waveforms note: pw and v cc adjusted for desired i c r b adjusted for desired i b1 p w duty cycle 10% t r , t f 10 ns 68 1 k 0.001 m f 0.02 m f 1n493 3 270 +5 v 1 k 2n2905 47 1/2 w 100 -v be(off) mje20 0 t.u.t. i b r b 1n493 3 1n493 3 33 33 2n222 2 1 k mje21 0 v cc +5 v l i c mr826 * v clamp *selected for 1 kv v ce 5.1 k 51 +v cc r c scope -4 v d 1 r b tut coil data: ferroxcube core #6656 full bobbin (~16 turns) #16 gap for 200 m h/20 a l coil = 200 m h v cc = 30 v v ce(pk) = 250 vdc i c(pk) = 6 a v cc = 250 v d1 = 1n5820 or equiv. i c v ce i c(pk) t 1 t f t t t 2 tim e v ce or v clamp t f clamped t 1 adjusted to obtain i c t 1 l coil (i c pk ) v cc t 2 l coil (i c pk ) v clamp test equipment scope-tektronics 475 or equivalent +10 v 25 m s 0 -9.2 v t r , t f < 10 ns duty cycle = 1% r b and r c adjusted for desired i b and i c table 1. test conditions for dynamic performance v ce , collector-emitter voltage (volts) figure 5. inductive switching measurements i c , collector current (amps) 1 0.2 0.1 1.4 0.8 1.2 10 5 2 1 0.5 0.2 1.6 1.8 0.6 0.4 h fe = 20 +25 c -55 c +150 c
mje5740 MJE5742 http://onsemi.com 5 safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 6 may be found at any case temperature by using the appropriate curve on figure 1. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 7 gives the complete rbsoa characteristics. the safe operating area figures shown in figures 6 and 7 are specified ratings for these devices under the test conditions show n. i c , collector current (amps) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 6. forward bias safe operating area figure 7. reverse bias safe operating area 16 14 12 8 0 2 4 10 100 200 300 500 0 400 16 5 10 8 1 0.02 100 i c , collector current (amps) 0.1 10 20 200 400 3 0.5 50 0.3 0.05 dc 1ms 100 m s MJE5742 mje5740 v be(off) 5 v t j = 100 c 6 curves apply below rated v ceo 10 m s MJE5742 mje5740 5ms bonding wire limit thermal limit (single pulse) second breakdown limit t, time (s) m t, time (s) m i c , collector current (amps) 0.5 0.7 1 2 10 7 5 2 1 0.7 0.2 0.3 5 0.5 10 3 3 0.3 0.2 7 i c , collector current (amps) 0.5 0.7 1 2 10 0.7 0.5 0.2 0.1 0.07 0.02 0.3 figure 8. turnon time 5 0.05 1 figure 9. turnoff time 3 v cc = 250 v i b1 = i b2 i c /i b = 20 t s t r t f t d v cc = 250 v i b1 = i b2 i c /i b = 20 0.3 0.03 0.2 7 resistive switching performance
mje5740 MJE5742 http://onsemi.com 6 package dimensions case 221a09 issue aa to220aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
mje5740 MJE5742 http://onsemi.com 7 notes
mje5740 MJE5742 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje5740/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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